^s.m.i-donductoi lpiodueti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 TIC116 series silicon controlled rectifiers ? 8 a continuous on-state current ? 80 a surge-current ? glass passivated wafer ? 400 v to 800 v off-state voltage ? max igt of 20 ma to-220 p> (top\ c a c ; <-?!< ; ivckage new) 1 2 3 o pin 2 is in electrical contact with the mounting base. absolute maximum ratings over operating case temperature (unless otherwise noted) rating repetitive peak off-state voltage repetitive peak reverse voltage continuous on-state current at (or below) 70c case temperature (see note 1) TIC116d TIC116m TIC116s TIC116n TIC116d TIC116m TIC116s TIC116n average on-state current (180 conduction angle) at (or below) 70c case temperature (see note 2) surge on-state current at (or below) 25c case temperature (see note 3) peak positive gate current (pulse width < 300 us) peak gate power dissipation (pulse width < 300 us) average gate power dissipation (see note 4) operating case temperature range storage temperature range lead temperature 1 .6 mm from case for 10 seconds symbol vdrm vrrm 't(rms) 't(av) itm 'qm pgm pg(av) tc tstg tl value 400 600 700 800 400 600 700 800 8 5 80 3 5 1 -40to+110 -4010+125 230 unit v v a a a a w w c c c notes: 1 . these values apply for continuous dc operation with resistive load. above 70c derate linearly to zero at 1 1 0c. 2. this value may be applied continuously under single phase 50 hz half-sine-wave operation with resistive load. above 70c derate linearly to zero at 110c. 3. this value applies for one 50 hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. surge may be repeated after the device has returned to original thermal equilibrium. 4, this value applies for a maximum averaging time of 20 ms. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
TIC116 series silicon controlled rectifiers electrical characteristics at 25c case temperature (unless otherwise noted) parameter repetitive peak drm off-state current repetitive peak reverse current igt gate trigger current vgt gate trigger voltage ih holding current on-state t voltage critical rate of rise of dv/dt off-state voltage test conditions vd = rated vdrm tc = 110c vr = rated vrrm ig = 0 t0 = 110'c vaa = 12v rl= 100 n tp(g)20^s vaa=12v rl= 100 q tc = -40c tp(g) 20 ms vaa = 12v rl= 100 n tp(g) ^ 20 ms vaa = 12v rl= 100n tc = 110c tp(g) a 20 ms vaa = 12v tc = -40c initiating it = 100 ma vaa = 12v initiating it = 100ma it = 8 a (see note 5) vd = rated vd ig = 0 tc = 1 10c min 0.2 typ 8 0.8 400 max 2 2 20 2.5 1.5 100 40 1.7 unit ma ma ma v ma v v/ms note 5: this parameter must be measured using pulse techniques, tp = 300 us, duty cycle < 2 %. voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics parameter rejc junction to case thermal resistance roja junction to free air thermal resistance min typ max 3 62.5 unit c/w "c/w
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